BLS6G3135S-20, BLS6G3135-20 Datasheet - Ampleon

BLS6G3135S-20 LDMOS S-Band radar power transistor

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W).

BLS6G3135S-20 Features

* Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 s and a  of 10 %:

* Output power = 20 W

* Power gain = 15.5 dB

* Efficiency = 45 %

* Integrated ESD protection

* Excellent ruggedness

* High effi

BLS6G3135S-20, BLS6G3135-20 Datasheet

BLS6G3135S-20 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLS6G3135S-20, BLS6G3135-20. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLS6G3135S-20, BLS6G3135-20

Manufacturer:

Ampleon

File Size:

358.05 KB

Description:

Ldmos s-band radar power transistor.

This datasheet PDF includes multiple part numbers: BLS6G3135S-20, BLS6G3135-20.
Please refer to the document for exact specifications by model.

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