BLS7G2729LS-350P, BLS7G2729L-350P Datasheet - Ampleon

BLS7G2729LS-350P LDMOS S-band radar power transistor

350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz.

BLS7G2729LS-350P Features

* High efficiency

* Excellent ruggedness

* Designed for S-band operation (2.7 GHz to 2.9 GHz)

* Excellent thermal stability

* Easy power control

* Integrated ESD protection

* High flexibility with respect to pulse formats

* Internally matched for ease of use

* Com

BLS7G2729LS-350P, BLS7G2729L-350P Datasheet

BLS7G2729LS-350P Datasheet Preview — This datasheet PDF includes multiple part numbers: BLS7G2729LS-350P, BLS7G2729L-350P. Please refer to the document for exact specifications by model.

BLS7G2729LS-350P Datasheet Preview Page 2

BLS7G2729LS-350P Datasheet Preview Page 3

Datasheet Details

Part number:

BLS7G2729LS-350P, BLS7G2729L-350P

Manufacturer:

Ampleon

File Size:

363.57 KB

Description:

Ldmos s-band radar power transistor.

This datasheet PDF includes multiple part numbers: BLS7G2729LS-350P, BLS7G2729L-350P.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

BLS7G2729LS-350P LDMOS S-band radar power transistor (NXP)

BLS7G2729L-350P LDMOS S-band radar power transistor (Ampleon)

BLS7G2729L-350P LDMOS S-band radar power transistor (NXP)

BLS7G2730L-200P LDMOS S-band radar power transistor (Ampleon)

BLS7G2730L-200P LDMOS S-band radar power transistor (NXP)

BLS7G2730LS-200P LDMOS S-band radar power transistor (Ampleon)

BLS7G2730LS-200P LDMOS S-band radar power transistor (NXP)

BLS7G2325L-105 Power LDMOS transistor (Ampleon)

TAGS

BLS7G2729LS-350P BLS7G2729L-350P LDMOS S-band radar power transistor Ampleon

BLS7G2729LS-350P Distributor