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BLS7G2933S-150 Datasheet - Ampleon

LDMOS S-band radar power transistor

BLS7G2933S-150 Features

* Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:

* Output power = 150 W

* Power gain = 13.5 dB

* Efficiency = 47 %

* Easy power control

* Integrated ESD protection

* High flexi

BLS7G2933S-150 General Description

150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp D (dB) (%).

BLS7G2933S-150 Datasheet (297.68 KB)

Preview of BLS7G2933S-150 PDF

Datasheet Details

Part number:

BLS7G2933S-150

Manufacturer:

Ampleon

File Size:

297.68 KB

Description:

Ldmos s-band radar power transistor.

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BLS7G2933S-150 LDMOS S-band radar power transistor Ampleon

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