BLS9G2729LS-350 transistor equivalent, ldmos s-band radar power transistor.
* High efficiency
* Excellent ruggedness
* Designed for S-band operations
* Excellent thermal stability
* Easy power control
* Integrated dual sid.
in the frequency range from 2.7 GHz to 2.9 GHz.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp =.
350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo circuit.
Test signal
f
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