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BLS9G2729LS-350, BLS9G2729L-350 - LDMOS S-band radar power transistor

Ampleon

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BLS9G2729LS-350 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLS9G2729LS-350, BLS9G2729L-350. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	BLS9G2729LS-350, BLS9G2729L-350
Manufacturer	Ampleon
File Size	498.17 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS9G2729L-350-Ampleon.pdf
Note	This datasheet PDF includes multiple part numbers: BLS9G2729LS-350, BLS9G2729L-350. Please refer to the document for exact specifications by model.

BLS9G2729LS-350 Product details

Description

350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz.

Features

High efficiency.
Excellent ruggedness.
Designed for S-band operations.
Excellent thermal stability.
Easy power control.
Integrated dual sided ESD protection enables excellent off-state isolation.
High flexibility with respect to pulse formats.
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Published: Apr 26, 2018 |