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BLS9G2729LS-350 Datasheet - Ampleon

LDMOS S-band radar power transistor

BLS9G2729LS-350 Features

* High efficiency

* Excellent ruggedness

* Designed for S-band operations

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally matc

BLS9G2729LS-350 General Description

350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) pulsed .

BLS9G2729LS-350 Datasheet (498.17 KB)

Preview of BLS9G2729LS-350 PDF

Datasheet Details

Part number:

BLS9G2729LS-350

Manufacturer:

Ampleon

File Size:

498.17 KB

Description:

Ldmos s-band radar power transistor.
BLS9G2729L-350: BLS9G2729LS-350 LDMOS S-band radar power transistor Rev. 1 13 April 2017 Product data sheet 1. Product profile 1.1 Genera.

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BLS9G2729LS-350 LDMOS S-band radar power transistor Ampleon

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