BLS9G3135L-400 transistor equivalent, ldmos s-band radar power transistor.
* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual side.
in the frequency range from 3.1 GHz to 3.5 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; t.
400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo circuit.
Test s.
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