BLS9G3135LS-400, BLS9G3135L-400 Datasheet - Ampleon

BLS9G3135LS-400 LDMOS S-band radar power transistor

400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%).

BLS9G3135LS-400 Features

* High efficiency

* Excellent ruggedness

* Designed for S-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally match

BLS9G3135LS-400, BLS9G3135L-400 Datasheet

BLS9G3135LS-400 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLS9G3135LS-400, BLS9G3135L-400. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number:

BLS9G3135LS-400, BLS9G3135L-400

Manufacturer:

Ampleon

File Size:

566.37 KB

Description:

Ldmos s-band radar power transistor.

This datasheet PDF includes multiple part numbers: BLS9G3135LS-400, BLS9G3135L-400.
Please refer to the document for exact specifications by model.

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BLS9G3135LS-400 BLS9G3135L-400 LDMOS S-band radar power transistor Ampleon

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