AF4811P Datasheet | Anachip

P-Channel 30-V (D-S) MOSFET Features -Low r DS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack applications General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as puters, printers, battery charger, telemunication power system, and telephones power system. Product Summary VDS (V) -30 r DS(on) (mΩ) 30@VGS=-10V 52@VGS=-4.5V ID (A) 9.5 7.5 Pin Assignments 1 2 3 4 8 7 6 5 Pin Descriptions Pin Name S G D Description Source Gate Drain SOP-8 Ordering information A X Feature F :MOSFET PN 4811P X X X Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent acpany the sale of the product. Rev. 1.0 Jul 16, 2004 1/3 Free Datasheet http://../ P-Channel 30-V (D-S) MOSFET...