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AF8958C - P & N-Channel 30-V (D-S) MOSFET

General Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Key Features

  • -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter.

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Datasheet Details

Part number AF8958C
Manufacturer Anachip
File Size 324.64 KB
Description P & N-Channel 30-V (D-S) MOSFET
Datasheet download datasheet AF8958C Datasheet

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www.DataSheet4U.com AF8958C P & N-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applications General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Product Summary VDS (V) 30 -30 rDS(on) (mΩ) 40@VGS=4.5V 28@VGS=10V 80@VGS=-4.