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AF9926N Datasheet Preview

AF9926N Datasheet

N-Channel Enhancement Mode Power MOSFET

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AF9926N pdf
N-Channel Enhancement Mode Power MOSFET
AF9926N
„ Features
- Capable of 2.5V Gate Drive
- Low On-resistance
- Low Drive Current
- Surface Mount Package
„ General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
„ Product Summary
BVDSS (V)
20
RDS(ON) (m)
30
ID (A)
6
„ Pin Assignments
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
„ Pin Descriptions
Pin Name
S1/2
G1/2
D1/2
Description
Source
Gate
Drain
„ Ordering information
A X 9926N X X X
Feature
F :MOSFET
PN
Package
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/6



Anachip
Anachip

AF9926N Datasheet Preview

AF9926N Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

AF9926N pdf
N-Channel Enhancement Mode Power MOSFET
AF9926N
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID Continuous Drain Current (Note 1)
IDM
PD
TSTG
TJ
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
TA=25ºC
TA=70ºC
TA=25ºC
„ Thermal Data
Symbol
Parameter
Rthj-amb Thermal Resistance Junction-ambient (Note 1)
Max.
Rating
20
±12
6
4.8
26
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Maximum
62.5
Units
ºC/W
„ Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
Test Conditions Min.
BVDSS
BVDSS /
TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
(Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
Drain-Source Leakage Current
(TJ=70oC)
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
Reference to 25oC,
ID=1mA
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=20V, VGS=0V
VDS=20V, VGS=0V
VGS=12V
VGS=-12V
ID=6A,
VDS=20V,
VGS=5V
VDS=10V,
ID=1A,
RG=6, VGS=5V
RD=10
VGS=0V,
VDS=20V,
f=1.0MHz
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
20
-
-
-
-
23
4.5
7
30
70
40
65
1035
320
150
Max. Units
-V
- V/oC
30
45
m
1.2 V
-S
25
uA
250
100
-100
35
7
11
60
140
80
130
-
-
-
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
Parameter
Test Conditions Min.
IS Continuous Source Current (Body Diode) VD=VG=0V, VS=1.3V -
VSD Forward On Voltage (Note 3)
TJ=25ºC, IS=1.7A,
VGS=0V
-
Note 1: Surface mounted on 1 in2 copper pad of FR4 board, 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width 300us, duty cycle 2%.
Typ.
-
0.78
Max.
1.54
1.2
Unit
V
V
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
2/6


Part Number AF9926N
Description N-Channel Enhancement Mode Power MOSFET
Maker Anachip
Total Page 6 Pages
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