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AF9926N - N-Channel Enhancement Mode Power MOSFET

General Description

The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Product Summary BVDSS (V) 20 RDS(ON) (mΩ) 30 ID (A) 6 Pin Assignments S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1

Key Features

  • s - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package.
  • General.

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Datasheet Details

Part number AF9926N
Manufacturer Anachip
File Size 408.23 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet AF9926N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET AF9926N „ Features - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. „ Product Summary BVDSS (V) 20 RDS(ON) (mΩ) 30 ID (A) 6 „ Pin Assignments S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 „ Pin Descriptions Pin Name S1/2 G1/2 D1/2 Description Source Gate Drain „ Ordering information A X 9926N X X X Feature F :MOSFET PN Package S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp.