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Analog Devices Semiconductor Electronic Components Datasheet

ADG774 Datasheet

CMOS 3 V/5 V/ Wide Bandwidth Quad 2:1 Mux

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a
CMOS
3 V/5 V, Wide Bandwidth Quad 2:1 Mux
ADG774
FEATURES
Low Insertion Loss and On Resistance: 4 Typical
On-Resistance Flatness <2
Bandwidth >200 MHz
Single 3 V/5 V Supply Operation
Rail-to-Rail Operation
Very Low Distortion: <1%
Low Quiescent Supply Current (100 nA Typical)
Fast Switching Times
tON 10 ns
tOFF 4 ns
TTL/CMOS Compatible
APPLICATIONS
10/100 Base-TX/T4
100VG-AnyLAN
Token Ring 4 Mbps/16 Mbps
ATM25/155
NIC Adapter and Hubs
Audio and Video Switching
Relay Replacement
FUNCTIONAL BLOCK DIAGRAM
ADG774
S1A
S1B
S2A
S2B
S3A
S3B
S4A
S4B
1 OF 2
DECODER
EN IN
D1
D2
D3
D4
GENERAL DESCRIPTION
The ADG774 is a monolithic CMOS device comprising four
2:1 multiplexer/demultiplexers with high impedance outputs.
The CMOS process provides low power dissipation yet gives
high switching speed and low on resistance. The on-resistance
variation is typically less than 0.5 with an input signal ranging
from 0 V to 5 V.
The bandwidth of the ADG774 is greater than 200 MHz and
this, coupled with low distortion (typically 0.5%), makes the
part suitable for switching fast ethernet signals.
The on-resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion when switch-
ing audio signals. Fast switching speed, coupled with high signal
bandwidth, also makes the parts suitable for video signal switch-
ing. CMOS construction ensures ultralow power dissipation
making the parts ideally suited for portable and battery powered
instruments.
The ADG774 operates from a single 3.3 V/5 V supply and is
TTL logic compatible. The control logic for each switch is shown
in the Truth Table.
These switches conduct equally well in both directions when ON,
and have an input signal range that extends to the supplies. In
the OFF condition, signal levels up to the supplies are blocked.
The ADG774 switches exhibit break-before-make switching
action.
PRODUCT HIGHLIGHTS
1. Wide bandwidth data rates >200 MHz.
2. Ultralow Power Dissipation.
3. Extended Signal Range.
The ADG774 is fabricated on a CMOS process giving an
increased signal range that fully extends to the supply rails.
4. Low leakage over temperature.
5. Break-Before-Make Switching.
This prevents channel shorting when the switches are config-
ured as a multiplexer.
6. Crosstalk is typically –70 dB @ 30 MHz.
7. Off isolation is typically –60 dB @ 10 MHz.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1998


Analog Devices Semiconductor Electronic Components Datasheet

ADG774 Datasheet

CMOS 3 V/5 V/ Wide Bandwidth Quad 2:1 Mux

No Preview Available !

ADG774–SPECIFICATIONS
SINGLE SUPPLY (VDD = +5 V ؎ 10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Match Between
Channels (RON)
On Resistance Flatness (RFLAT(ON))
B Version
+25؇C
TMIN to
TMAX
0 V to VDD
2.2
5
0.15
0.5
0.5
1
Units
V
typ
max
typ
max
typ
max
Test Conditions/Comments
VD = 0 V to VDD, IS = –10 mA
VD = 0 V to VDD, IS = –10 mA
VD = 0 V to VDD; IS = –1 mA
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
± 0.01
± 0.5
± 0.01
± 0.5
± 0.01
± 0.5
±1
±1
±1
nA typ
nA max
nA typ
nA max
nA typ
nA max
VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V;
Test Circuit 2
VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V;
Test Circuit 2
VD = VS = 4.5 V; VD = VS = 1 V; Test Circuit 3
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.001
DYNAMIC CHARACTERISTICS2
tON
tOFF
Break-Before-Make Time Delay, tD
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
Distortion
Charge Injection
CS (OFF)
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
2.4
0.8
± 0.5
10
20
4
8
5
1
–65
–75
240
0.5
10
10
20
30
IDD 1
0.001
IIN 1
IO 100
NOTES
1Temperature ranges are as follows: B Version, –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
V min
V max
µA typ
µA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
MHz typ
% typ
pC typ
pF typ
pF typ
pF typ
µA max
µA typ
µA typ
mA max
VIN = VINL or VINH
RL = 100 , CL = 35 pF,
VS = +3 V; Test Circuit 4
RL = 100 , CL = 35 pF,
VS = +3 V; Test Circuit 4
RL = 100 , CL = 35 pF,
VS1 = VS2 = +5 V; Test Circuit 5
RL = 100 , f = 10 MHz; Test Circuit 7
RL = 100 , f = 10 MHz; Test Circuit 8
RL = 100 ; Test Circuit 6
RL = 100
CL = 1 nF; Test Circuit 9
f = 1 kHz
f = 1 kHz
f = 1 MHz
VDD = +5.5 V
Digital Inputs = 0 V or VDD
VIN = +5 V
VS/VD = 0 V
–2– REV. 0


Part Number ADG774
Description CMOS 3 V/5 V/ Wide Bandwidth Quad 2:1 Mux
Maker Analog Devices
Total Page 8 Pages
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