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Analog Devices Semiconductor Electronic Components Datasheet

ADG919 Datasheet

Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches

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PRELIMINARY TECHNICAL DATA
a Wideband, 43dB Isolation @ 1GHz,
CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches
Preliminary Technical Data
ADG918/ADG919
FEATURES
Wideband DC to 2GHz
ADG918/ADG919 Absorptive/Reflective Switches
High Off Isolation (43 dB @ 1 GHz)
Low Insertion Loss (1 dB DC to 900 MHz)
Single 1.65 to 2.75 V power supply
CMOS/LVTTL Control Logic
8 Lead MSOP & Tiny 3 x 3mm CSP Packages
Low Power Consumption (5µA)
APPLICATIONS
Wireless Communications
General Purpose RF switching
Dual Band Applications
Filter Selection
Antenna Switch
Digital Transceiver Front-End Switch
IF Switching
GENERAL DESCRIPTION
The ADG918/ADG919 are wideband switches using a
CMOS process to provide high isolation and low insertion
loss to 1GHz. The ADG918 is an absorptive switch
having 50 ohm terminated shunt legs, while the ADG919
is a reflective switch. These devices are designed such that
the isolation is high over the DC to 1GHz frequency
range. They have on board CMOS control logic, thus
eliminating the need for external controlling circuitry.
The control inputs are both CMOS and LVTTL
compatible. The low power consumption of these CMOS
devices makes them ideally suited to wireless applications
and general purpose high frequency switching.
FUNCTIONAL BLOCK DIAGRAM
RF COMMON
CONTROL
ADG918
RF1
50
RF2
50
ADG919
RF COMMON
CONTROL
RF1
RF2
Table 1. Truth Table
Control
0
1
Signal Path
RF2 to RF Common
RF1 to RF Common
Figure 1. Isolation vs Frequency
REV. PrC Sept 2002
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Figure 2. Loss vs Frequency
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
Analog Devices, Inc., 2002


Analog Devices Semiconductor Electronic Components Datasheet

ADG919 Datasheet

Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches

No Preview Available !

PRELIMINARY TECHNICAL DATA
ADG918/ADG919–SPECIFICATIONS1
(VDD = +1.65 V to +2.75 V, GND = 0 V, All specifications TMIN to TMAX unless otherwise noted)
Parameter
Symbol Conditions
B Version
Min
Typ2
AC ELECTRICAL CHARACTERISTICS
Operating Frequency
Insertion Loss
S21, S12
Isolation- RF to RF1/RF2
S21, S12
Isolation - RF1 to RF2
S21, S12
Return Loss (On Channel)
S11, S22
On switching Time
Off Switching Time
1 dB Compression
Third Order Intermodulation intercept
tON
tOFF
P-1dB
IP3
DC - 100 MHz
500 MHz
900 MHz
1 MHz
100 MHz
500 MHz
1000 MHz
1 MHz
100 MHz
500 MHz
1000 MHz
DC - 100 MHz
500 MHz
1000 MHz
50% Control to 90% RF
50% Control to 10% RF
DC to 1000 MHz
900MHz, 5dBm
DC ELECTRICAL CHARACTERISTICS
Input High Voltage
Input Low Voltage
Input Leakage Current
VINH
VINH
VINL
VINL
II
VDD = 2.3 V to 2.75 V
VDD = 1.65 V to 1.95 V
VDD = 2.3 V to 2.75 V
VDD = 1.65 V to 1.95 V
0 Յ VIN Յ 2.75 V
CAPACITANCE3
RF1/RF2, RF Port On Capacitance
Control Input Capacitance
CRF ON f = 1 MHz
CIN f = 1 MHz
POWER REQUIREMENTS
VDD
Quiescent Power Supply Current
IDD Digital Inputs = 0 V or VDD
NOTES
1Temperature range is as follows: B Version: –40°C to +85°C.
2 Typical values are at +25°C unless otherwise stated.
3 Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
DC
0.4
0.65
1.0
100
55
43
100
55
30
26
23
5
4
20
35
1.7
0.65VCC
2
2
1.65
1
Max
Units
2 GHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
ns
dBm
dBm
0.7
0.35VCC
±1
V
V
V
V
µA
pF
pF
2.75 V
5 µA
–2– REV. PrC


Part Number ADG919
Description Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches
Maker Analog Devices
Total Page 4 Pages
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