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ADRF5130 - Silicon SPDT / Reflective Switch

General Description

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package.

The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations.

Key Features

  • Reflective, 50 Ω design Low insertion loss 0.6 dB typical to 2.0 GHz 0.7 dB typical to 3.5 GHz High isolation 50 dB typical to 2.0 GHz 46 dB typical to 3.5 GHz High power handling RF input power, continuous wave (CW) at TCASE = 85°C 43 dBm maximum operating 46.5 dBm absolute maximum rating High linearity 0.1 dB compression (P0.1dB): 46 dBm typical Input third-order intercept (IP3) 68 dBm typical to 2 GHz 65 dBm typical to 3.5 GHz ESD ratings Human body model (HBM): 2 kV, Class 2 Charged device m.

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Full PDF Text Transcription for ADRF5130 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ADRF5130. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet High Power, 44 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 3.8 GHz ADRF5130 FEATURES Reflective, 50 Ω design Low insertion loss 0.6 dB typical to 2.0 G...

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RES Reflective, 50 Ω design Low insertion loss 0.6 dB typical to 2.0 GHz 0.7 dB typical to 3.5 GHz High isolation 50 dB typical to 2.0 GHz 46 dB typical to 3.5 GHz High power handling RF input power, continuous wave (CW) at TCASE = 85°C 43 dBm maximum operating 46.5 dBm absolute maximum rating High linearity 0.1 dB compression (P0.1dB): 46 dBm typical Input third-order intercept (IP3) 68 dBm typical to 2 GHz 65 dBm typical to 3.5 GHz ESD ratings Human body model (HBM): 2 kV, Class 2 Charged device model (CDM): 1.