Datasheet Summary
Features
- Integrated RF front end
- LNA and high-power silicon SPDT switch
- On-chip bias and matching
- Single-supply operation
- Gain: 35.5 dB typical at 3.6 GHz
- Gain flatness: 1.5 dB at 25°C across 400 MHz bandwidth
- Low noise figure: 1.3 dB typical at 3.6 GHz
- Low insertion loss: 0.8 dB typical at 3.6 GHz
- High-power handling at TCASE = 105°C
- Full lifetime
- LTE average power (8 dB PAR): 37 dBm
- Single event (<10 sec operation)
- LTE average power (8 dB PAR): 39 dBm
- High Input IP3:
- 4 dBm
- Low-supply current
- Receive operation: 120 mA typical at 5 V
- Transmit operation: 15 mA typical at 5 V
- Positive logic control
- 5 mm × 3 mm, 24-lead LFCSP package
APPLICATIONS
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