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HMC1114 Datasheet Power Amplifier

Manufacturer: Analog Devices

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General Description

The HMC1114 is a gallium nitride (GaN), broadband power amplifier, delivering 10 W with more than 50% power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz.

The HMC1114 provides ±0.5 dB gain flatness.

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114 FUNCTIONAL BLOCK DIAGRAM HMC1114 32 GND 31 GND 30 VDD1 29 GND 28 GND 27 VDD2 26 VDD2 25 GND GND 1 GND 2 GND 3 RFIN 4 RFIN 5 GND 6

Overview

Data Sheet.

Key Features

  • High saturated output power (PSAT): 41.5 dBm typical High small signal gain: 35 dB typical High power gain for saturated output power: 25.5 dB typical Bandwidth: 2.7 GHz to 3.8 GHz High power added efficiency (PAE): 54% typical High output IP3: 44 dBm typical Supply voltage: VDD = 28 V at 150 mA 32-lead, 5 mm × 5 mm LFCSP_CAV package.

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