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HMC1127 - Power Amplifier

Description

The HMC1127 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates between 2 GHz and 50 GHz.

Features

  • Output power for 1 dB compression (P1dB): 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to 30 GHz Gain: 14.5 dB typical at 30 GHz to 50 GHz Output third-order intercept (IP3): 23 dBm typical at 8 GHz to 30 GHz Supply voltage: 5 V at 80 mA 50 Ω matched input/output Die size: 2.7 mm × 1.45 mm × 0.1 mm.

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Datasheet Details

Part number HMC1127
Manufacturer Analog Devices
File Size 381.53 KB
Description Power Amplifier
Datasheet download datasheet HMC1127 Datasheet
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Full PDF Text Transcription

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Data Sheet GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 FEATURES Output power for 1 dB compression (P1dB): 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to 30 GHz Gain: 14.5 dB typical at 30 GHz to 50 GHz Output third-order intercept (IP3): 23 dBm typical at 8 GHz to 30 GHz Supply voltage: 5 V at 80 mA 50 Ω matched input/output Die size: 2.7 mm × 1.45 mm × 0.1 mm APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFOUT RFIN 1 Figure 1.
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