Data Sheet
FEATURES
Conversion loss: 9 dB typical
LO to RF isolation: 40 dB typical
LO to IF isolation: 35 dB typical
RF to IF isolation: 22 dB typical
Input IP3: 18 dBm typical
Input P1dB: 11 dBm typical
Input IP2: 55 dBm typical
Passive double balanced topology
8-lead, 3 mm × 3 mm, MINI_SO_EP
APPLICATIONS
Microwave radios
High performance radio local area network (HiperLAN) and
unlicensed national information infrastructure (U-NII)
Industrial, scientific, and medical (ISM)
GENERAL DESCRIPTION
The HMC219B is an ultraminiature, general-purpose, double
balanced mixer in an 8-lead plastic surface mini small outline
package with exposed pad (MINI_SO_EP). This passive
monolithic microwave integrated circuit (MMIC) mixer is
fabricated in a gallium arsenide (GaAs) metal semiconductor
field effect transistor (MESFET) process and requires no
external components or matching circuitry. The device can be
used as an upconverter, downconverter, biphase demodulator,
or phase comparator from 2.5 GHz to 7.0 GHz.
2.5 GHz to 7.0 GHz GaAs, MMIC
Fundamental Mixer
HMC219B
FUNCTIONAL BLOCK DIAGRAM
GND 1
LO 2
GND 3
NIC 4
HMC219B
8 GND
7 RF
6 GND
5 IF
Figure 1.
The HMC219B provides excellent local oscillator (LO) to radio
frequency (RF) isolation and LO to intermediate frequency (IF)
isolation due to optimized balun structures. The RoHS compliant
HMC219B eliminates the need for wire bonding and is compatible
with high volume surface-mount manufacturing techniques. The
consistent MMIC performance improves system operation and
assures regulatory compliance with HiperLAN, U-NII, and ISM.
Rev. A
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