HMC327MS8G Description
The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external ponents, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a single +5V supply.
HMC327MS8G Key Features
- HMC327MS8G Evaluation Board
- HMC327 Material Declaration
- PCN-PDN Information
- Quality And Reliability
- Symbols and Footprints
- Broadband Biasing of Amplifiers General Application Note
- MMIC Amplifier Biasing Procedure Application Note
- Thermal Management for Surface Mount ponents
- HMC327 Data Sheet
- HMC327 S-Parameter