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HMC327MS8GE Datasheet GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER

Manufacturer: Analog Devices

Download the HMC327MS8GE datasheet PDF. This datasheet also includes the HMC327MS8G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HMC327MS8G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

General Description

The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a single +5V supply.

Overview

HMC327MS8G / 327MS8GE v06.1209 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz 11 Typical Applications The HMC327MS8G(E) is ideal for: • Wireless Local Loop • WiMAX & Fixed Wireless • Access Points • Subscriber.

Key Features

  • High Gain: 21 dB Saturated Power: +30 dBm @ 45% PAE Output P1dB: +27 dBm Single Supply: +5V Power Down Capability Low External Part Count Compact MSOP Package: 14.8 mm2 Functional Diagram General.

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