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HMC406MS8GE Datasheet GaAs InGaP HBT MMIC POWER AMPLIFIER

Manufacturer: Analog Devices

Download the HMC406MS8GE datasheet PDF. This datasheet also includes the HMC406MS8G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HMC406MS8G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

General Description

The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5V supply voltage.

Overview

Amplifiers - Linear & Power - SMT HMC406MS8G / 406MS8GE v06.

Key Features

  • Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count Functional Diagram General.

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