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HMC407MS8GE Datasheet GaAs InGaP HBT MMIC POWER AMPLIFIER

Manufacturer: Analog Devices

Download the HMC407MS8GE datasheet PDF. This datasheet also includes the HMC407MS8G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HMC407MS8G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

General Description

The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz.

The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

Overview

HMC407MS8G / 407MS8GE v04.1019 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: • UNII •.

Key Features

  • Gain: 15 dB Saturated Power: +29 dBm 28% PAE Supply Voltage: +5V Power Down Capability No External Matching Required Functional Diagram General.

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