HMC408LP3 Datasheet | Analog Devices

Features Gain: 20 d B Saturated Power: +32.5 d Bm @ 27% PAE Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package General Description The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz high efficiency Ga As In Ga P Heterojunction Bipolar Transistor (HBT) Power Amplifier MMICs which offer +30 d Bm P1d B. The amplifier provides 20 d B of gain, +32.5 d Bm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external ponents. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance. LINEAR & POWER AMPLIFIERS - SMT - 34 Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss- Output Power for 1 d B pression (P1d B) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Harmonics, Pout= 30 d Bm, F= 5.8 GHz Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Min. Typ. Max. - 5.9 17 20 Icq= 750 m A Icq= 500 m A 30 27 40 43 2 fo -50 3 fo -90 Vpd= 0V/5V 0.002 / 750 Vpd= 5V 14 t On, t Off - Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein. Min. 17 24 36 Typ. 5.1 - 5.9 20...