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HMC408LP3E Datasheet GaAs InGaP HBT MMIC 1WATT POWER AMPLIFIER

Manufacturer: Analog Devices

Download the HMC408LP3E datasheet PDF. This datasheet also includes the HMC408LP3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HMC408LP3_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

General Description

The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMICs which offer +30 dBm P1dB.

The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage.

The input is internally matched to 50 Ohms while the output requires a minimum of external components.

Overview

v03.0705 11 Typical Applications The HMC408LP3 / HMC408LP3E is ideal for: • 802.11a & HiperLAN WLAN • UNII & Point-to-Point / Multi-Point Radios • Access Point Radios Functional Diagram HMC408LP3 / 408LP3E GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.

Key Features

  • Gain: 20 dB Saturated Power: +32.5 dBm @ 27% PAE Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package General.

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