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HMC413QS16GE Datasheet GaAs InGaP HBT MMIC POWER AMPLIFIER

Manufacturer: Analog Devices

Download the HMC413QS16GE datasheet PDF. This datasheet also includes the HMC413QS16G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HMC413QS16G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

General Description

The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz.

The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance.

With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage.

Overview

HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz LINEAR & POWER AMPLIFIERS - SMT 11 Typical Applications This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.

Key Features

  • Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit General.

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