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HMC414MS8GE Datasheet GaAs InGaP HBT MMIC POWER AMPLIFIER

Manufacturer: Analog Devices

Download the HMC414MS8GE datasheet PDF. This datasheet also includes the HMC414MS8G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HMC414MS8G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

General Description

The HMC414MS8G & HMC414MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 2.2 and 2.8 GHz.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage.

Overview

HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz 11 Typical Applications This amplifier is ideal for use as a power amplifier for 2.2 - 2.

Key Features

  • Gain: 20 dB Saturated Power: +30 dBm 32% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Functional Diagram General.

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