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HMC415LP3E Datasheet GaAs InGaP HBT MMIC POWER AMPLIFIER

Manufacturer: Analog Devices

Download the HMC415LP3E datasheet PDF. This datasheet also includes the HMC415LP3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HMC415LP3_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

General Description

The HMC415LP3 & HMC415LP3E are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 4.9 and 5.9 GHz.

The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance.

With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage.

Overview

v03.0605 HMC415LP3 / 415LP3E GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz LINEAR & POWER AMPLIFIERS - SMT 11 11 - 66 Typical Applications This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: • 802.

Key Features

  • Gain: 20 dB 34% PAE @ Psat = +26 dBm 3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal Supply Voltage: +3V Power Down Capability Low External Part Count General.

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