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HMC455LP3E Datasheet InGaP HBT

Manufacturer: Analog Devices

Download the HMC455LP3E datasheet PDF. This datasheet also includes the HMC455LP3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HMC455LP3_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

General Description

The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz.

Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage.

The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifiers for PCS/3G wireless infrastructures.

Overview

v02.0605 HMC455LP3 / 455LP3E InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.

Key Features

  • Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package General.