HMC457QS16GE Datasheet InGaP HBT

Manufacturer: Analog Devices

Download the HMC457QS16GE datasheet PDF. This datasheet also includes the HMC457QS16G variant, as both parts are published together in a single manufacturer document.

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HMC457QS16GE ingap hbt by Analog Devices - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HMC457QS16G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HMC457QS16GE
Manufacturer	Analog Devices
File Size	499.37 KB
Description	InGaP HBT
Download	HMC457QS16GE Download (PDF)

General Description

The HMC457QS16G & HMC457QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 1.7 and 2.2 GHz.

Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz.

Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm.

Overview

HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.

Key Features

Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm2 Included in the HMC-DK002 Designer’s Kit LINEAR & POWER.

More Datasheets from Analog Devices

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