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HMC7229LS6 Datasheet Power Amplifier

Manufacturer: Analog Devices

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General Description

The HMC7229LS6 is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier, with an integrated temperature compensated on-chip power detector that operates between 37 GHz to 40 GHz.

The HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated output power at 18% PAE at 39 GHz from a 6 V supply.

With an excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear PACKAGE BASE GND NOTES 1.

Overview

Data Sheet GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz.

Key Features

  • 32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHz P1dB compression output power: 31.5 dBm typical High output third-order intercept (IP3): 40 dBm typical High gain: 24 dB typical 50 Ω matched input/output Ceramic, 6 mm × 6 mm, high frequency, air cavity package.

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