HMC737LP4E Description
The HMC737LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC737LP4(E) integrate a resonator, negative resistance device, varactor diode.
HMC737LP4E Key Features
- 15.5 GHz Fo/2 = 7.45
- 7.75 GHz
- 15.5 7.45
- 15.5 GHz
HMC737LP4E Applications
- Point to Point/Multipoint Radio