HMC738LP4E Description
The HMC738LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC738LP4(E) integrates a resonator, negative resistance device, varactor diode and divide-by-16 prescaler. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure.
HMC738LP4E Key Features
- 95 200
- 23.9 GHz
HMC738LP4E Applications
- Point-to-Point Radios
- Point-to-Multi-Point Radios / LMDS