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HMC755LP4E - GaAs MMIC 1WATT POWER AMPLIFIER

Description

The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz.

The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply.

Features

  • High Gain: 31 dB High PAE: 28% @ +33 dBm Pout Low EVM: 2.5% @ +25 dBm Pout with 54 Mbps OFDM Signal High Output IP3: +43 dBm Integrated Detector & Power Control 24 Lead 4x4mm QFN Package: 16mm² General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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v05.0312 HMC755LP4E GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Amplifiers - Linear & Power - SMT OBSOLETE Typical Applications The HMC755LP4E is Ideal for: • Cellular/3G & LTE/4G • WiMAX, WiBro & Fixed Wireless • Military & SATCOM • Test Equipment Functional Diagram Features High Gain: 31 dB High PAE: 28% @ +33 dBm Pout Low EVM: 2.5% @ +25 dBm Pout with 54 Mbps OFDM Signal High Output IP3: +43 dBm Integrated Detector & Power Control 24 Lead 4x4mm QFN Package: 16mm² General Description The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply.
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