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HMC756 - GaAs PHEMT MMIC 1WATT POWER AMPLIFIER

Description

The HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz.

The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply.

Features

  • Saturated Output Power: +33 dBm @ 28% PAE High Output IP3: +41 dBm High Gain: 23 dB DC Supply: +7V @ 790mA DC Blocked RF I/Os No External Matching Required Die Size: 2.4 x 1.6 x 0.1 mm General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Amplifiers - Linear & Power - Chip v02.0110 Typical Applications The HMC756 is ideal for: • Point-to-Point Radios 3 • Point-to-Multi-Point Radios • VSAT • Military & Space Functional Diagram HMC756 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Features Saturated Output Power: +33 dBm @ 28% PAE High Output IP3: +41 dBm High Gain: 23 dB DC Supply: +7V @ 790mA DC Blocked RF I/Os No External Matching Required Die Size: 2.4 x 1.6 x 0.1 mm General Description The HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs).
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