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HMC757LP4E - GaAs pHEMT MMIC 0.5WATT POWER AMPLIFIER

Description

The HMC757LP4E is a three stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz.

The HMC757LP4E provides 20.5 dB of gain, and 27.5 dBm of saturated output power and 21% PAE from a +5V supply.

The RF I/Os are DC blocked and matched to 50 Ohms.

Features

  • Saturated Output Power: 27.5 dBm @ 21% PAE High Output IP3: 34.5 dBm High Gain: 20.5 dB DC Supply: +5V @ 400 mA No External Matching Required 24 Lead 4x4 mm SMT Package: 16 mm² General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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v00.0610 Typical Applications The HMC757LP4E is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT 9 • Military & Space Functional Diagram HMC757LP4E GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz Features Saturated Output Power: 27.5 dBm @ 21% PAE High Output IP3: 34.5 dBm High Gain: 20.5 dB DC Supply: +5V @ 400 mA No External Matching Required 24 Lead 4x4 mm SMT Package: 16 mm² General Description The HMC757LP4E is a three stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757LP4E provides 20.5 dB of gain, and 27.5 dBm of saturated output power and 21% PAE from a +5V supply. The RF I/Os are DC blocked and matched to 50 Ohms.
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