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HMC788A - RF Gain Block

Description

The HMC788A is a 0.01 GHz to 10 GHz, gain block, monolithic microwave integrated circuit (MMIC) amplifier using gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) technology.

Features

  • Gain: 14 dB typical Operational frequency range: 0.01 GHz to 10 GHz Input/output internally matched to 50 Ω High input linearity 1 dB compression (P1dB): 20 dBm typical Output third-order intercept (OIP3): 33 dBm typical Supply voltage: 5 V typical 2 mm × 2 mm, 6-lead lead frame chip scale package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block HMC788A FEATURES Gain: 14 dB typical Operational frequency range: 0.01 GHz to 10 GHz Input/output internally matched to 50 Ω High input linearity 1 dB compression (P1dB): 20 dBm typical Output third-order intercept (OIP3): 33 dBm typical Supply voltage: 5 V typical 2 mm × 2 mm, 6-lead lead frame chip scale package APPLICATIONS Cellular, 3G, LTE, WiMAX, and 4G LO driver applications Microwave radio Test and measurement equipment Ultra wideband (UWB) communications GENERAL DESCRIPTION The HMC788A is a 0.01 GHz to 10 GHz, gain block, monolithic microwave integrated circuit (MMIC) amplifier using gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) technology.
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