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HMC815B Datasheet I/Q Upconverter

Manufacturer: Analog Devices

Overview: Data Sheet.

General Description

The HMC815B is a compact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant package that operates from 21 GHz to 27 GHz.

This device provides a small signal conversion gain of 12 dB and a sideband rejection of 20 dBc.

The HMC815B utilizes a driver amplifier proceeded by an in phase/quadrature (I/Q) mixer where the LO is driven by an active 2× multiplier.

Key Features

  • Conversion gain: 12 dB typical Sideband rejection: 20 dBc typical OP1dB compression: 20 dBm typical OIP3: 27 dBm typical 2× LO to RF isolation: 10 dB typical 2× LO to IF isolation: 15 dB typical RF return loss: 12 dB typical LO return loss: 15 dB typical IF return loss: 15 dB typical Exposed pad, 4.90 mm × 4.90 mm, 32-terminal, ceramic LCC.