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HMC8402 Datasheet Low Noise Amplifier

Manufacturer: Analog Devices

General Description

The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz.

The amplifier provides 13.5 dB of gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of output power at 1 dB gain compression while requiring 68 mA from a 7 V supply.

The HMC8402 is self biased with only a single positive supply needed to achieve a drain current IDQ of 68 mA.

Overview

Data Sheet 2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier.

Key Features

  • Output power for 1 dB compression (P1dB): 21.5 dBm typical Saturated output power (PSAT): 22 dBm typical Gain: 13.5 dB typical Noise figure: 2 dB Output third order intercept (IP3): 26 dBm typical Supply voltage: 7 V at 68 mA 50 Ω matched input/output Die size: 2.7 mm × 1.363 mm × 0.05 mm.