The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz.
Key Features
High output power for 1 dB compression (P1dB): 22 dBm High saturated output power (PSAT): 24 dBm High gain: 13 dB High output third-order intercept (IP3): 33.5 dBm Supply voltage: 10 V at 175 mA 50 Ω matched input/output Die size: 2.82 mm × 1.50 mm × 0.1 mm.
Full PDF Text Transcription for HMC930A (Reference)
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Data Sheet GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz HMC930A FEATURES High output power for 1 dB compression (P1dB): 22 dBm High saturated output power (PSA...
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r for 1 dB compression (P1dB): 22 dBm High saturated output power (PSAT): 24 dBm High gain: 13 dB High output third-order intercept (IP3): 33.5 dBm Supply voltage: 10 V at 175 mA 50 Ω matched input/output Die size: 2.82 mm × 1.50 mm × 0.1 mm APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain
HMC930A Datasheet
