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HMC943APM5E - MMIC Power Amplifier

Description

The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to 34 GHz.

Features

  • High saturated output power (PSAT): 34 dBm High output IP3: 39 dBm High gain: 23 dB DC supply: 5.5 V at 1300 mA No external matching required 32-lead, 5 mm × 5 mm LFCSP_CAV package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet >1.5 W (34 dBm), 24 GHz to 34 GHz, GaAs, pHEMT, MMIC, Power Amplifier HMC943APM5E FEATURES High saturated output power (PSAT): 34 dBm High output IP3: 39 dBm High gain: 23 dB DC supply: 5.5 V at 1300 mA No external matching required 32-lead, 5 mm × 5 mm LFCSP_CAV package APPLICATIONS Point to point radios Point to multipoint radios Microwave radios, very small aperture terminals (VSATs), and satellite communications (SATCOM) Military and space GENERAL DESCRIPTION The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to 34 GHz.
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