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Analog Devices Semiconductor Electronic Components Datasheet

OP282 Datasheet

Dual/Quad Low Power / High Speed JFET Operational Amplifiers

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a
Dual/Quad Low Power, High Speed
JFET Operational Amplifiers
OP282/OP482
FEATURES
High Slew Rate: 9 V/s
Wide Bandwidth: 4 MHz
Low Supply Current: 250 A/Amplifier
Low Offset Voltage: 3 mV
Low Bias Current: 100 pA
Fast Settling Time
Common-Mode Range Includes V+
Unity Gain Stable
APPLICATIONS
Active Filters
Fast Amplifiers
Integrators
Supply Current Monitoring
GENERAL DESCRIPTION
The OP282/OP482 dual and quad operational amplifiers feature
excellent speed at exceptionally low supply currents. Slew rate
exceeds 7 V/µs with supply current under 250 µA per amplifier.
These unity gain stable amplifiers have a typical gain bandwidth
of 4 MHz.
The JFET input stage of the OP282/OP482 insures bias current
is typically a few picoamps and below 500 pA over the full
temperature range. Offset voltage is under 3 mV for the dual
and under 4 mV for the quad.
With a wide output swing, within 1.5 volts of each supply, low
power consumption and high slew rate, the OP282/OP482 are
ideal for battery-powered systems or power restricted applica-
tions. An input common-mode range that includes the positive
supply makes the OP282/OP482 an excellent choice for high-
side signal conditioning.
The OP282/OP482 are specified over the extended industrial
temperature range. Both dual and quad amplifiers are available
in plastic and ceramic DIP plus SOIC surface mount packages.
PIN CONNECTIONS
8-Lead Narrow-Body SOIC
8-Lead Epoxy DIP
(S Suffix)
(P Suffix)
OUT A 1
–IN A 2
+IN A 3
V– 4
OP282
8 V+
7 OUT B
6 –IN B
5 +IN B
OUT A 1
–IN A 2
+IN A 3
V– 4
OP282
OP-482
8 V+
7 OUT B
6 –IN B
5 +IN B
14-Lead Epoxy DIP
(P Suffix)
14-Lead Narrow-Body SOIC
(S Suffix)
OUT A 1
–IN A 2
+IN A 3
V+ 4
+IN B 5
–IN B 6
OUT B 7
OP482
14 OUT D
13 –IN D
12 +IN D
11 V–
10 +IN C
9 –IN C
8 OUT C
OUT A 1
–IN A 2
+IN A 3
V+ 4
+IN B 5
–IN B 6
OUT B 7
OP482
14 OUT B
13 –IN D
12 +IN D
11 V–
10 +IN C
9 –IN C
8 OUT C
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703


Analog Devices Semiconductor Electronic Components Datasheet

OP282 Datasheet

Dual/Quad Low Power / High Speed JFET Operational Amplifiers

No Preview Available !

OP282/OP482–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = ؎15.0 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
VOS
VOS
IB
IOS
CMR
AVO
VOS/T
IB/T
OP282
OP282, –40 TA +85°C
OP482
OP482, –40 TA +85°C
VCM = 0 V
VCM = 0 V, Note 1
VCM = 0 V
VCM = 0 V, Note 1
–11 V VCM +15 V, –40 TA +85°C
RL = 10 k
RL = 10 k, –40 TA +85°C
–11
70
20
15
OUTPUT CHARACTERISTICS
Output Voltage Swing
Short Circuit Limit
Open-Loop Output Impedance
VO
ISC
ZOUT
RL = 10 k
Source
Sink
f = 1 MHz
–13.5
3
–8
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
Supply Voltage Range
PSRR
ISY
VS
VS = ± 4.5 V to ± 18 V,
–40 TA +85°C
VO = 0 V, 40 TA +85°C
± 4.5
DYNAMIC PERFORMANCE
Slew Rate
Full-Power Bandwidth
Settling Time
Gain Bandwidth Product
Phase Margin
SR
BWP
tS
GBP
ØO
RL = 10 k
1% Distortion
To 0.01%
7
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
in
0.1 Hz to 10 Hz
f = 1 kHz
NOTE
1The input bias and offset currents are tested at TA = TJ = +85°C. Bias and offset currents are guaranteed but not tested at –40 °C.
Specifications subject to change without notice.
0.2
0.2
3
1
90
10
8
± 13.9
10
–12
200
25
210
9
125
1.6
4
55
1.3
36
0.01
3
4.5
4
6
100
500
50
250
+15
13.5
316
250
± 18
mV
mV
mV
mV
pA
pA
pA
pA
V
dB
V/mV
V/mV
µV/°C
pA/°C
V
mA
mA
µV/V
µA
V
V/µs
kHz
µs
MHz
Degrees
µV p-p
nV/Hz
pA/Hz
WAFER TEST LIMITS (@ VS = ؎15.0 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Limit
Units
Offset Voltage
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range1
Common-Mode Rejection
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage Range
Supply Current/Amplifier
VOS
VOS
IB
IOS
CMRR
PSRR
AVO
VO
ISY
OP282
OP482
VCM = 0 V
VCM = 0 V
–11 V VCM +15 V
V = ± 4.5 V to ± 18 V
RL = 10 k
RL = 10 k
VO = 0 V, RL =
3
4
100
50
–11, +15
70
316
20
± 13.5
250
mV max
mV max
pA max
pA max
V min/max
dB min
µV/V
V/mV min
V min
µA max
NOTES
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
1Guaranteed by CMR test.
Specifications subject to change without notice.
–2– REV. B


Part Number OP282
Description Dual/Quad Low Power / High Speed JFET Operational Amplifiers
Maker Analog Devices
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OP282 Datasheet PDF






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