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REF191 Datasheet

Precision Micropower/ Low Dropout/ Voltage References

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a
Precision Micropower, Low Dropout,
Voltage References
REF19x Series
FEATURES
Initial Accuracy: ؎2 mV max
Temperature Coefficient: 5 ppm/°C max
Low Supply Current: 45 A max
Sleep Mode: 15 A max
Low Dropout Voltage
Load Regulation: 4 ppm/mA
Line Regulation: 4 ppm/V
High Output Current: 30 mA
Short Circuit Protection
APPLICATIONS
Portable Instrumentation
A-to-D and D-to-A Converters
Smart Sensors
Solar Powered Applications
Loop Current Powered Instrumentations
GENERAL DESCRIPTION
REF19x series precision bandgap voltage references use a pat-
ented temperature drift curvature correction circuit and laser
trimming of highly stable thin film resistors to achieve a very low
temperature coefficient and a high initial accuracy.
The REF19x series are micropower, Low Dropout Voltage
(LDV) devices providing a stable output voltage from supplies
as low as 100 mV above the output voltage and consuming less
than 45 µA of supply current. In sleep mode, which is enabled
by applying a low TTL or CMOS level to the sleep pin, the
output is turned off and supply current is further reduced to less
than 15 µA.
The REF19x series references are specified over the extended
industrial temperature range (–40°C to +85°C) with typical
performance specifications over –40°C to +125°C for applica-
tions such as automotive.
All electrical grades are available in 8-Lead SOIC; the PDIP and
TSSOP are only available in the lowest electrical grade. Prod-
ucts are also available in die form.
Test Pins (TP)
The test pins, Pin 1 and Pin 5, are reserved for in-package
zener-zap. To achieve the highest level of accuracy at the out-
put, the zener-zapping technique is used to trim the output
voltage. Since each unit may require a different amount of ad-
justment, the resistance value at the test pins will vary widely
from pin-to-pin as well as from part-to-part. The user should
not make any physical nor electrical connections to Pin 1 and
Pin 5.
PIN CONFIGURATIONS
8-Lead Narrow-Body SO and TSSOP
(S Suffix and RU Suffix)
TP 1
8 NC
VS 2
REF19x
SERIES
7 NC
SLEEP 3 TOP VIEW 6 OUTPUT
(Not to Scale)
GND 4
5 TP
8-Lead Epoxy DIP (P Suffix)
TP 1
VS 2
REF19x
SERIES
8 NC
7 NC
SLEEP 3 TOP VIEW 6 OUTPUT
(Not to Scale)
GND 4
5 TP
NC = NO CONNECT
TP PINS ARE FACTORY TEST POINTS
NO USER CONNECTION
Part Number
REF191
REF192
REF193
REF194
REF195
REF196
REF198
Table I
Nominal Output Voltage (V)
2.048
2.50
3.00
4.50
5.00
3.30
4.096
ORDERING GUIDE
Model
Temperature
Range
Package
Description
Package
Option1
REF19xGP
REF19xES3
REF19xFS3
REF19xGS
REF19xGRU
REF19xGBC
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
+25°C
8-Lead Plastic DIP2
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead TSSOP
DICE
N-8
SO-8
SO-8
SO-8
RU-8
NOTES
1N = Plastic DIP, SO = Small Outline, RU = Thin Shrink Small Outline.
28-Lead plastic DIP only available in “G” grade.
3REF193 and REF196 are available in “G” grade only.
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1999


Analog Devices Semiconductor Electronic Components Datasheet

REF191 Datasheet

Precision Micropower/ Low Dropout/ Voltage References

No Preview Available !

REF19x Series
REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
INITIAL ACCURACY1
“E” Grade
“F” Grade
“G” Grade
VO IOUT = 0 mA
2.046
2.043
2.038
2.048
LINE REGULATION2
“E” Grade
“F & G” Grades
LOAD REGULATION2
“E” Grade
“F & G” Grades
VO/VIN
3.0 V VS 15 V, IOUT = 0 mA
VO/VLOAD VS = 5.0 V, 0 IOUT 30 mA
2
4
4
6
DROPOUT VOLTAGE
LONG-TERM STABILITY3
NOISE VOLTAGE
VS – VO
VO
eN
VS = 3.15 V, ILOAD = 2 mA
VS = 3.3 V, ILOAD = 10 mA
VS = 3.6 V, ILOAD = 30 mA
1000 Hours @ +125°C
0.1 Hz to 10 Hz
1.2
20
NOTES
1Initial accuracy includes temperature hysteresis effect.
2Line and load regulation specifications include the effect of self-heating.
3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
Max
2.050
2.053
2.058
4
8
10
15
0.95
1.25
1.55
ELECTRICAL CHARACTERISTICS (@ VS = 3.3 V, –40؇C TA +85؇C unless otherwise noted)
Parameter
TEMPERATURE COEFFICIENT1, 2
“E” Grade
“F” Grade
“G” Grade3
LINE REGULATION4
“E” Grade
“F & G” Grades
LOAD REGULATION4
“E” Grade
“F & G” Grades
DROPOUT VOLTAGE
Symbol
TCVO/°C
VO/VIN
VO/VLOAD
VS – VO
SLEEP PIN
Logic High Input Voltage
Logic High Input Current
Logic Low Input Voltage
Logic Low Input Current
SUPPLY CURRENT
Sleep Mode
VH
IH
VL
IL
Condition
IOUT = 0 mA
3.0 V VS 15 V, IOUT = 0 mA
VS = 5.0 V, 0 IOUT 25 mA
VS = 3.15 V, ILOAD = 2 mA
VS = 3.3 V, ILOAD = 10 mA
VS = 3.6 V, ILOAD = 25 mA
No Load
No Load
Min Typ
2
5
10
5
10
5
10
2.4
NOTES
1For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (TMAX–TMIN).
3Guaranteed by characterization.
4Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
Max
5
10
25
10
20
15
20
0.95
1.25
1.55
–8
0.8
–8
45
15
Units
V
V
V
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
V
mV
µV p-p
Units
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
V
V
µA
V
µA
µA
µA
–2– REV. D


Part Number REF191
Description Precision Micropower/ Low Dropout/ Voltage References
Maker Analog Devices
Total Page 23 Pages
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