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Analog Power
N-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters
AM10N20-400D
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
200 400 @ VGS = 10V
ID(A) 10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current b
TC=25°C
ID IDM
10 40
Continuous Source Current (Diode Conduction)
IS 10
Power Dissipation
TC=25°C
PD
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-
AM10N20-400D Datasheet
