AM10P10-530D - P-Channel MOSFET

Analog Power

Key Features

Low rDS(on) trench technology.
Low thermal impedance.
Fast switching speed Typical.

AM10P10-530D p-channel mosfet by Analog Power - Datasheet Preview

Datasheet Details

Part number	AM10P10-530D
Manufacturer	Analog Power
File Size	268.61 KB
Description	P-Channel MOSFET
Datasheet	AM10P10-530D Datasheet

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Other Datasheets by Analog Power

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AM10P10-530I	P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Analog Power P-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM10P10-530D VDS (V) -100 PRODUCT SUMMARY rDS(on) (mΩ) 530 @ VGS = -10V 720 @ VGS = -4.5V ID(A) -6.9 -6.0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25°C TA=25°C VGS ID IDM IS PD ±20 -6.9 -50 -6.