AM30N10-70D Datasheet | Analog Power

Features : - Low r DS(on) trench technology - Low thermal impedance - Fast switching speed Typical Applications: - Po E Power Sourcing Equipment - Po E Powered Devices - Tele DC/DC converters - White LED boost converters PRODUCT SUMMARY r DS(on) (mΩ) 78 @ VGS = 10V 92 @ VGS = 4.5V VDS (V) 100 ID(A) 21 19 ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 TC=25°C ID Continuous Drain Current 21 IDM Pulsed Drain Current b 100 IS Continuous Source Current (Diode Conduction) 30 T =25°C P 50 Power Dissipation C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range .Data Sheet.co.kr Units V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 50 RθJC 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary Publication Order Number: DS-AM30N10-70D_rev C Datasheet pdf - http://..net/ Analog Power Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Symbol VGS(th) IGSS IDSS ID(on) r DS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Test Conditions Static VDS = VGS, ID = 250 u A VDS = 0 V, VGS = 20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 9.2 A VGS = 4.5 V, ID = 6.1 A VDS = 40 V, ID = 5.5 A IS = 9 A, VGS = 0 V Dynamic VDS = 50 V, VGS = 4.5 V, ID = 9 A Min 1 Typ Max Unit V u A u A A ±10 1 25 34 78 92 20 0.8 21 3.8 14.2 7.5 13.6 41 35 mΩ S V n C VDD = 50 V, RL = 5.2 Ω , ID = 9.6 A, VGEN = 10 V, RGEN = 6 Ω n S Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production...