Analog Power AM30P10-80D
P-Channel MOSFET
| Part No. | AM30P10-80D |
|---|---|
| Datasheet | AM30P10-80D Download |
| Manufacturer |  Analog Power |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC ID IDM IS TA=25oC PD TJ, Tstg -100 ±20 25 ±40 -15 50 -55 to 175 V A A W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM30P10-80_A Analog Power AM30P10-80D SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Paramete r Symbol Te st Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb Total Gate Charge...
