The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Analog Power
N-Channel 100-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
AM40N10-30I
VDS (V) 100
PRODUCT SUMMARY rDS(on) (mΩ)
36 @ VGS = 10V 42 @ VGS = 4.5V
ID (A) 31 29
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 31.
AM40N10-30I Datasheet
