The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Analog Power
N-Channel 600-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics
AM4N60B
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
600 2 @ VGS = 10V
ID (A) 4a
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 600
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 4 16 4
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient c Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA
AM4N60B Datasheet
