Analog Power AM50N10-18D
N-Channel MOSFET
| Part No. | AM50N10-18D |
|---|---|
| Datasheet | AM50N10-18D Download |
| Manufacturer |  Analog Power |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● White LED boost converters
● Automotive Systems
● Industrial DC/DC Conversion Circuits AM50N10-18D VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 18 @ VGS = 10V 24 @ VGS = 5.5V ID(A) 43 37
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C VGS ID IDM IS PD ±20 43 160 55 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM50N10-18D_1A Analog Power AM50N10-18D...
