Analog Power AM5N50
N-Channel MOSFET
| Part No. | AM5N50 |
|---|---|
| Datasheet | AM5N50 Download |
| Manufacturer |  Analog Power |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● Electronic ballast
● Electronic transformer
● Switch mode power supply AM5N50 VDS (V) 500 PRODUCT SUMMARY rDS(on) (Ω) 1.5 @ VGS = 10V ID(A) 4.5 TO-220
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C VGS ID IDM IS PD ±20 4.5 18 4.5 74 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 1.7 Units °C/W Notes a. Package limited b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM5N50_2010 Analog Power AM5N50 Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero...
