Analog Power AM7001P
P-Channel MOSFET
| Part No. | AM7001P |
|---|---|
| Datasheet | AM7001P Download |
| Manufacturer |  Analog Power |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● PoE Power Sourcing Equipment
● PoE Powered Devices
● Telecom DC/DC converters AM7001P VDS (V) -200 PRODUCT SUMMARY rDS(on) (mΩ) 900 @ VGS = -10V 1000 @ VGS = -5.5V ID(A) -1.6 -1.5 DFN3x3-8L
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -200 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS -1.6 -1.2 -7 -3.8 Power Dissipation a TA=25°C TA=70°C PD 3.5 2 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol RθJA Maximum 35 81 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM7001P_...
