Analog Power AM8N60P
N-Channel MOSFET
| Part No. | AM8N60P |
|---|---|
| Datasheet | AM8N60P Download |
| Manufacturer |  Analog Power |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● Off-line Power Supplies
● Electronic Ballasts
● High Power LED Lighting AM8N60P PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 600 1 @ VGS = 10V ID(A) 8a DRAIN connected to TAB
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current a TC=25°C ID IDM 8 50 Continuous Source Current (Diode Conduction) TC=25°C IS 8 Power Dissipation TC=25°C PD 150 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 1 Units °C/W Notes a. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM8N60P_1A Analog Power AM8N60PELECTRICAL CHARACTERISTICS
Parameter Symbol Test Conditions Min T...
